650V 80 MOHM SIC JFET, G3, N-ON,
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 650 V |
Drain to Source Voltage (Vdss): | 650 V |
Current - Drain (Idss) @ Vds (Vgs=0): | - |
Current Drain (Id) - Max: | 32 A |
Voltage - Cutoff (VGS off) @ Id: | - |
Input Capacitance (Ciss) (Max) @ Vds: | 630pF @ 100V |
Resistance - RDS(On): | 95 mOhms |
Power - Max: | 190 W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PMBFJ176,215Rochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
LS26VNS DFN 8LLinear Integrated Systems, Inc. |
SINGLE N-CHANNEL JFET, VOLTAGE C |
|
2N4393 PBFREECentral Semiconductor |
JFET N-CH 40V 1.8W TO-18 |
|
CMPF4416A TRCentral Semiconductor |
JFET N-CH 35V 10MA SOT23 |
|
MMBFJ111Sanyo Semiconductor/ON Semiconductor |
JFET N-CH 35V 350MW SOT23-3 |
|
2N5639GRochester Electronics |
SMALL SIGNAL FET |
|
NTE460NTE Electronics, Inc. |
JFET-P-CH AF AMP |
|
2SK596S-ARochester Electronics |
SMALL SIGNAL FET |
|
J109Sanyo Semiconductor/ON Semiconductor |
JFET N-CH 25V 625MW TO92 |
|
2SK208-GR(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
JFET N-CH 50V SC59 |
|
2SK2394-7-TB-ESanyo Semiconductor/ON Semiconductor |
JFET N-CH 50MA 200MW 3CP |
|
LS320 DIELinear Integrated Systems, Inc. |
BIFET AMPLIFIER - HIGH INPUT Z A |
|
2SK880-BL(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
JFET N-CH 50V 0.1W USM |