RF MOSFET HEMT 28V 440199
Type | Description |
---|---|
Series: | GaN |
Package: | Tray |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 0Hz ~ 2.5GHz |
Gain: | 19dB |
Voltage - Test: | 28 V |
Current Rating (Amps): | 56A |
Noise Figure: | - |
Current - Test: | 2 A |
Power - Output: | 220W |
Voltage - Rated: | 84 V |
Package / Case: | 440199 |
Supplier Device Package: | 440199 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IXZ210N50L2Wickmann / Littelfuse |
RF MOSFET N-CHANNEL DE275 |
|
UF28150JMetelics (MACOM Technology Solutions) |
MOSFET 150W 28V 100-500MHZ |
|
LET9045CSTMicroelectronics |
MOSFET N-CH 80V 9A M-250 |
|
MMRF1004NR1NXP Semiconductors |
RF MOSFET LDMOS 28V TO270-2 |
|
AFT05MS031NR1NXP Semiconductors |
FET RF 40V 520MHZ TO-270-2 |
|
AFV10700HSR5NXP Semiconductors |
RF MOSFET LDMOS DL 50V NI780S-4L |
|
MRF6S19060NR1NXP Semiconductors |
FET RF 68V 1.93GHZ TO270-4 |
|
IRFAF20Rochester Electronics |
N-CHANNEL HERMETIC MOS HEXFET |
|
BLU6H0410L-600P,11Ampleon |
RF FET LDMOS 110V 21DB SOT539A |
|
BF1009SRE6327HTSA1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
BLF888DUAmpleon |
RF FET LDMOS 104V 21DB SOT539A |
|
SAV-581+ |
SMT LOW NOISE AMPLIFIER, 45 - 60 |
|
MRF6S19120HR5Rochester Electronics |
FET RF 68V 1.99GHZ NI-780 |