RF MOSFET HEMT 28V DIE
Type | Description |
---|---|
Series: | GaN |
Package: | Tray |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 8GHz |
Gain: | 16.5dB |
Voltage - Test: | 28 V |
Current Rating (Amps): | - |
Noise Figure: | - |
Current - Test: | 200 mA |
Power - Output: | 30W |
Voltage - Rated: | 84 V |
Package / Case: | Die |
Supplier Device Package: | Die |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
A2I08H040NR1NXP Semiconductors |
IC RF LDMOS AMP |
|
BLS9G2934L-400UAmpleon |
RF MOSFET LDMOS 32V SOT502A |
|
BLF7G24LS-100,112Ampleon |
RF FET LDMOS 65V 18DB SOT502B |
|
PD55035-ESTMicroelectronics |
FET RF 40V 500MHZ PWRSO-10 |
|
MRF7S27130HSR5Rochester Electronics |
POWER, N-CHANNEL, MOSFET |
|
BLC9G20XS-550AVTZAmpleon |
RF FET LDMOS 65V 15.4DB SOT12587 |
|
475-102N21A-00Wickmann / Littelfuse |
RF MOSFET N-CHANNEL DE475 |
|
BLC8G20LS-310AVYAmpleon |
RF FET LDMOS 65V 17DB SOT12583 |
|
BLF8G09LS-270WJAmpleon |
RF FET LDMOS 65V 20DB SOT1244B |
|
MRF175LUMetelics (MACOM Technology Solutions) |
FET RF 65V 400MHZ 333-04 |
|
J113RL1Rochester Electronics |
SMALL SIGNAL N-CHANNEL J-FET |
|
BLC9G20LS-470AVTZAmpleon |
RF FET LDMOS 65V 15.7DB SOT12583 |
|
BLF0910H9LS600UAmpleon |
BLF0910H9LS600/SOT502/TRAY |