DIODE SCHOTTKY 1.2KV 10A TO252-2
Type | Description |
---|---|
Series: | Z-Rec® |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 33A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.8 V @ 10 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 250 µA @ 1200 V |
Capacitance @ Vr, F: | 754pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SL03-GS18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V DO219 |
|
S1KLHRQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1A SUB SMA |
|
RS3M V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 3A DO214AB |
|
RB168M150DDTRROHM Semiconductor |
DIODE SCHOTTKY 150V 1A PMDU |
|
SB160TASMC Diode Solutions |
DIODE SCHOTTKY 60V 1A DO41 |
|
DST1045S-AWickmann / Littelfuse |
DIODE SCHOTTKY 45V 10A TO277B |
|
1N4942GP-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
|
CDBFN160-HFComchip Technology |
DIODE SCHOTTKY 60V 1A SOD323 |
|
SS35 R7GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 3A DO214AB |
|
BYD13KGPHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
|
IDH03G65C5XKSA2IR (Infineon Technologies) |
DIODE SCHOTTKY 650V 3A TO220-2-1 |
|
NTE6049NTE Electronics, Inc. |
R-50PRV 70A ANODE CASE |
|
VS-71HFR140Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.4KV 70A DO203AB |