DIODE SCHOTTKY 1.2KV 10A TO220-2
Type | Description |
---|---|
Series: | Amp+™ |
Package: | Tube |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.8 V @ 10 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 20 µA @ 1200 V |
Capacitance @ Vr, F: | 635pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TSD1GHTSC (Taiwan Semiconductor) |
1A 400V ESD CAPABILITY RECTIFIER |
|
1N5814Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 20A DO203AA |
|
B0530WS-7-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 30V 500MA SOD323 |
|
V20PWM60HM3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 20A SLIMDPAK |
|
RA251-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
RMPG06DHE3_A/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A MPG06 |
|
BAS21-7-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 200V 200MA SOT23 |
|
RURG8060Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 80A TO247-2 |
|
UF4007GPDiotec Semiconductor |
DIODE UFR DO-41 1000V 1A |
|
FT2000KADiotec Semiconductor |
DIODE FR TO-220AC 50V 20A |
|
MUR310S V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AB |
|
SD101BW-E3-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 400MW 50V SOD123 |
|
1N4007-FRectron USA |
DIODE GEN PURP 1000V 1A AMMO |