Type | Description |
---|---|
Series: | - |
Package: | Box |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 3 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 4 µs |
Current - Reverse Leakage @ Vr: | 1 µA @ 800 V |
Capacitance @ Vr, F: | 90pF @ 12V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | Axial |
Supplier Device Package: | Axial |
Operating Temperature - Junction: | -65°C ~ 200°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PMEG4005AEA,115Nexperia |
DIODE SCHOTTKY 40V 500MA SOD323 |
|
SS14L RQGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 1A SUB SMA |
|
STPS3L40UFNSTMicroelectronics |
40 V, 3 A SMD LOW DROP POWER SCH |
|
UJ3D06508TSUnitedSiC |
650V 8A SIC SCHOTTKY DIODE G3, T |
|
VS-SD1700C30KVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 3KV 2080A DO200AC |
|
STTH8L06DSTMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
|
NSB8MT-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 8A TO263AB |
|
1N5408GP-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 1KV 3A DO201AD |
|
RURP1560-F085Rochester Electronics |
RECTIFIER DIODE, AVALANCHE, 15A, |
|
56DN06B01ELEMXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 600V 8400A |
|
STPS0540ZYSTMicroelectronics |
DIODE SCHOTTKY 40V 500MA SOD123 |
|
SK56L-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 60V 5A DO214AB |
|
JANTXV1N4150-1Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 200MA DO35 |