DIODE GEN PURP 35V 10MA TO92
Type | Description |
---|---|
Series: | PAD |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 35 V |
Current - Average Rectified (Io): | 10mA |
Voltage - Forward (Vf) (Max) @ If: | 1.5 V @ 5 mA |
Speed: | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 5 pA @ 20 V |
Capacitance @ Vr, F: | 0.5pF @ 5V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-226-2, TO-92-2 (TO-226AC) |
Supplier Device Package: | TO-92 |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTE6010NTE Electronics, Inc. |
R-600V 40A FAST REC CC |
|
VS-8EWF04S-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A TO252AA |
|
CMPSH-3 BK PBFREECentral Semiconductor |
DIODE SCHOTTKY 30V 100MA SOT23 |
|
SS33 V7GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 3A 30V DO-214AB |
|
P1000S-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
1N4007T-GComchip Technology |
DIODE GEN PURP 1KV 1A DO41 |
|
SS2FH6HM3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 2A DO219AB |
|
1N6631USRoving Networks / Microchip Technology |
DIODE GEN PURP 1.1KV 1.4A A-MELF |
|
FFSH20120ASanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 1.2KV 30A TO247-2 |
|
ESH3B-E3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
|
SS12A-F1-0000HF |
DIODE SCHOTTKY 20V 1A DO214AC |
|
BYV27-050-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 55V 2A SOD57 |
|
P300K-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 3A DO201AD |