650V 4A SIC SCHOTTKY DIODE G3, T
Type | Description |
---|---|
Series: | Gen-III |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650 V |
Current - Average Rectified (Io): | 4A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 4 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 25 µA @ 650 V |
Capacitance @ Vr, F: | 118pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
UGF8BTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 8A ITO220AC |
|
IDH10G65C5XKSA1Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY, 1 PHA |
|
VS-20TQ040-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20A TO-220 |
|
ESH2BHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 2A DO214AA |
|
DSI45-16ARWickmann / Littelfuse |
DIODE GP 1.6KV 48A ISOPLUS247 |
|
1N3595-1Roving Networks / Microchip Technology |
DIODE GEN PURP 125V 150MA DO35 |
|
SL36ASURGE |
3A -60V - SMA (DO-214AC) - RECTI |
|
R2000-TRectron USA |
DIODE GEN PURP 2KV 1A DO41 |
|
CMR3U-04M TR13 PBFREECentral Semiconductor |
DIODE GEN PURP 400V 3A SMC |
|
CGRC503-GComchip Technology |
DIODE GEN PURP 200V 5A DO214AB |
|
RF201L2STE25ROHM Semiconductor |
DIODE GEN PURP 200V 2A PMDS |
|
S1JB M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO214AA |
|
RFU5TF6SROHM Semiconductor |
DIODE GEN PURP 600V 5A TO220NFM |