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WNSC10650T6J

WNSC10650T6J

SILICON CARBIDE POWER DIODE

WNSC10650T6J

WNSC10650T6J

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Part No :

WNSC10650T6J

Manufacturer
WeEn Semiconductors Co., Ltd
Description
SILICON CARBIDE POWER DIODE
Catalog
Diodes - Rectifiers - Single
Availability
13000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:60 µA @ 650 V
Capacitance @ Vr, F:328pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:4-VDFN Exposed Pad
Supplier Device Package:5-DFN (8x8)
Operating Temperature - Junction:175°C (Max)
WNSC10650T6J is available at GangBo-ic.com, Please review product page below for detailed information, including WNSC10650T6J price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for WNSC10650T6J to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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