650V 10A SIC SCHOTTKY DIODE G3,
Type | Description |
---|---|
Series: | Gen-III |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650 V |
Current - Average Rectified (Io): | 10A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 10 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 60 µA @ 650 V |
Capacitance @ Vr, F: | 327pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
US1B R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO214AC |
|
RFV8BGE6STLROHM Semiconductor |
SUPER FAST RECOVERY DIODE - RFV8 |
|
RS1M M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1A DO214AC |
|
BY550-400Diotec Semiconductor |
DIODE STD D5.4X7.5 400V 5A |
|
S3K V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO214AB |
|
VS-SD1100C20LVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 2KV 1170A B-43 |
|
SFM14PL-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 1A 200V SOD-123FL |
|
B350B-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 3A DO214AA |
|
S5GBHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 5A DO214AA |
|
RS1PDHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE 100V 1A DO-220AA |
|
SDM03U40-7Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 30V 30MA SOD523 |
|
BAT5402VH6327XTSA1IR (Infineon Technologies) |
DIODE SCHOTTKY 30V 200MA SC79-2 |
|
VB20120S-E3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 120V 20A TO263AB |