Type | Description |
---|---|
Series: | - |
Package: | Box |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 902mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25 V @ 721.6 mA |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | - |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | -55°C ~ 200°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1SS400T1Rochester Electronics |
RECTIFIER DIODE, 0.2A, 100V |
|
1N6481HE3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
|
NSB8GTHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A TO263AB |
|
SFF1005G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 10A ITO220AB |
|
D4810N28TVFXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 2.8KV 4810A |
|
GP30M-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |
|
1N1206ARGeneSiC Semiconductor |
DIODE GEN PURP REV 600V 12A DO4 |
|
BAT54-E3-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOT23 |
|
BAS45A,113Nexperia |
DIODE GEN PURP 125V 250MA DO34 |
|
FR6J-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 600V 6A DO214AB |
|
UPS140E3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 40V 1A POWERMITE |
|
EAL1MDiotec Semiconductor |
DIODE SFR DO-213AA 1000V 1A |
|
FFSH50120ASanyo Semiconductor/ON Semiconductor |
1200V 50A SIC SBD |