DIODE GP 1.2KV 1200A DO200AB
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 1200A |
Voltage - Forward (Vf) (Max) @ If: | 1.45 V @ 1500 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 25 µs |
Current - Reverse Leakage @ Vr: | 150 mA @ 1200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis Mount |
Package / Case: | DO-200AB, B-PUK |
Supplier Device Package: | DO-200AB, B-PUK |
Operating Temperature - Junction: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SF32GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO201AD |
|
MURA260T3GRochester Electronics |
RECTIFIER DIODE, 2A, 600V |
|
1N6074Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 850MA AXIAL |
|
RB058L-60TE25ROHM Semiconductor |
DIODE SCHOTTKY 60V 3A PMDS |
|
BY1800Diotec Semiconductor |
DIODE STD DO-201 1800V 3A |
|
ESH1D-M3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
SFF1006GA C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 10A ITO220AB |
|
GI1-1600GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 1A DO204AC |
|
GP15K-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1.5A DO204AC |
|
MUR120SHR5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AA |
|
CMHSH-3 TR PBFREECentral Semiconductor |
DIODE SCHOTTKY 30V 200MA SOD123 |
|
GER4004Rochester Electronics |
RECTIFIER DIODE, 1A, 400V |
|
BYW172F-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 300V 3A SOD64 |