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TPH3208PD

TPH3208PD

GANFET N-CH 650V 20A TO220AB

TPH3208PD

TPH3208PD

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Part No :

TPH3208PD

Manufacturer
Transphorm
Description
GANFET N-CH 650V 20A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
863286 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 19 - Dec 23 2024
PDF
TPH3208PD PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 13A, 8V
Vgs(th) (Max) @ Id:2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 8 V
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 400 V
FET Feature:-
Power Dissipation (Max):96W (Tc)
Operating Temperature:-55°C ~ 150°C
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
TPH3208PD is available at GangBo-ic.com, Please review product page below for detailed information, including TPH3208PD price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TPH3208PD to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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