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EPC8009

EPC8009

GANFET N-CH 65V 2.7A DIE

EPC8009

EPC8009

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Part No :

EPC8009

Manufacturer
EPC
Description
GANFET N-CH 65V 2.7A DIE
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12111 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 17 - Feb 21 2025
PDF
EPC8009 PDF
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):65 V
Current - Continuous Drain (Id) @ 25°C:2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:130mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.45 nC @ 5 V
Vgs (Max):+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds:52 pF @ 32.5 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Die
Package / Case:Die
EPC8009 is available at GangBo-ic.com, Please review product page below for detailed information, including EPC8009 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EPC8009 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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