650V 120M SIC MOSFET
Type | Description |
---|---|
Series: | C3M™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Rds On (Max) @ Id, Vgs: | 157mOhm @ 6.76A, 15V |
Vgs(th) (Max) @ Id: | 3.6V @ 1.86mA |
Gate Charge (Qg) (Max) @ Vgs: | 28 nC @ 15 V |
Vgs (Max): | +19V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: | 640 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 98W (Tc) |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-4L |
Package / Case: | TO-247-4 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
NTD4965NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13A/68A DPAK-3 |
![]() |
CSD17322Q5ATexas Instruments |
MOSFET N-CH 30V 87A 8VSON |
![]() |
AUIRF2907ZS7PTLRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
![]() |
SUD40N10-25-T4-E3Vishay / Siliconix |
MOSFET N-CH 100V 40A TO252 |
![]() |
IPW65R420CFDFKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 8.7A TO247-3 |
![]() |
AON7422GAlpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 30V 32A 8DFN |
![]() |
CSD17303Q5Texas Instruments |
MOSFET N-CH 30V 32A/100A 8VSON |
![]() |
STB4NK60ZT4STMicroelectronics |
MOSFET N-CH 600V 4A D2PAK |
![]() |
SIS110DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 5.2A/14.2A PPAK |
![]() |
IXFN64N60PWickmann / Littelfuse |
MOSFET N-CH 600V 50A SOT227B |
![]() |
BSC076N06NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 50A TDSON-8 |
![]() |
FDMS86252LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 4.4A 8PQFN |
![]() |
AOD5N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 5A TO252 |