MOSFET N-CH 600V 6.2A IPAK
Type | Description |
---|---|
Series: | DTMOSIV |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 6.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 820mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id: | 3.7V @ 310µA |
Gate Charge (Qg) (Max) @ Vgs: | 12 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 390 pF @ 300 V |
FET Feature: | Super Junction |
Power Dissipation (Max): | 60W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NVMFS5833NT1GRochester Electronics |
N-CHANNEL, MOSFET |
|
FDP8440Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
MTB15N06VRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQAF16N25Rochester Electronics |
MOSFET N-CH 250V 12.4A TO3PF |
|
IPW60R250CPRochester Electronics |
MOSFET N-CH 650V 12A TO247-3 |
|
FQPF3N80CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 3A TO220F |
|
RS1E180BNTBROHM Semiconductor |
MOSFET N-CHANNEL 30V 60A 8-HSOP |
|
IPA65R190C7Rochester Electronics |
IPA65R190 - 650V AND 700V COOLMO |
|
TK5Q65W,S1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 5.2A IPAK |
|
STW46NF30STMicroelectronics |
MOSFET N-CH 300V 42A TO247 |
|
APT37M100B2Roving Networks / Microchip Technology |
MOSFET N-CH 1000V 37A T-MAX |
|
XP151A11B0MR-GTorex Semiconductor Ltd. |
MOSFET N-CH 30V 1A SOT23 |
|
IRLML6244TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 6.3A SOT23 |