MOSFET N-CHANNEL 40V 40A 8DFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 7.5mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2229 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 27W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN-EP (3x3) |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMN61D9UWQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 400MA SOT323 |
|
TK040Z65Z,S1FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 57A TO247-4L |
|
AOTF9N90Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 900V 9A TO220-3F |
|
XN0NE9200LPanasonic |
MOSFET P-CH 12V 1.2A MINI5-G1 |
|
NDS8434ARochester Electronics |
MOSFET P-CH 20V 7.8A 8SOIC |
|
MTD3055VLSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 12A TO252-3 |
|
IPD30N10S3L34ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 30A TO252-3 |
|
IRFR5410TRLPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 13A DPAK |
|
SIR622DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 150V 12.6A PPAK |
|
STL47N60M6STMicroelectronics |
MOSFET N-CH 600V 31A PWRFLAT HV |
|
BSD314SPEH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 30V 1.5A SOT363-6 |
|
FDS8936ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFR21N100QWickmann / Littelfuse |
MOSFET N-CH 1000V 18A ISOPLUS247 |