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TPN2010FNH,L1Q

TPN2010FNH,L1Q

MOSFET N-CH 250V 5.6A 8TSON

TPN2010FNH,L1Q

TPN2010FNH,L1Q

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Part No :

TPN2010FNH,L1Q

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 250V 5.6A 8TSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12244 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
TPN2010FNH,L1Q PDF
Type Description
Series:U-MOSVIII-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:198mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 100 V
FET Feature:-
Power Dissipation (Max):700mW (Ta), 39W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSON Advance (3.3x3.3)
Package / Case:8-PowerVDFN
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