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TK100L60W,VQ

TK100L60W,VQ

MOSFET N-CH 600V 100A TO3P

TK100L60W,VQ

TK100L60W,VQ

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Part No :

TK100L60W,VQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 600V 100A TO3P
Catalog
Transistors - FETs, MOSFETs - Single
Availability
897089 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
PDF
TK100L60W,VQ PDF
Type Description
Series:DTMOSIV
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:18mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:360 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:15000 pF @ 30 V
FET Feature:Super Junction
Power Dissipation (Max):797W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P(L)
Package / Case:TO-3PL
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