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TW070J120B,S1Q

TW070J120B,S1Q

SICFET N-CH 1200V 36A TO3P

TW070J120B,S1Q

TW070J120B,S1Q

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Part No :

TW070J120B,S1Q

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
SICFET N-CH 1200V 36A TO3P
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10273 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
Type Description
Series:*
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:90mOhm @ 18A, 20V
Vgs(th) (Max) @ Id:5.8V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 20 V
Vgs (Max):±25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1680 pF @ 800 V
FET Feature:Standard
Power Dissipation (Max):272W (Tc)
Operating Temperature:-55°C ~ 175°C
Mounting Type:Through Hole
Supplier Device Package:TO-3P(N)
Package / Case:TO-3P-3, SC-65-3
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