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G2R1000MT17D

G2R1000MT17D

SIC MOSFET N-CH 4A TO247-3

G2R1000MT17D

G2R1000MT17D

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Part No :

G2R1000MT17D

Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH 4A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
185118 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 25 - Dec 29 2024
Type Description
Series:G2R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id:4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds:139 pF @ 1000 V
FET Feature:-
Power Dissipation (Max):53W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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