SICFET N-CH 1200V 18.4A TO247-3
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Cascode SiCJFET) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 18.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 12V |
Rds On (Max) @ Id, Vgs: | 180mOhm @ 5A, 12V |
Vgs(th) (Max) @ Id: | 5.5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: | 30 nC @ 15 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 738 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 166.7W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FCP16N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 16A TO220-3 |
|
AOV11S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 650MA/8A 4DFN |
|
STU10N60M2STMicroelectronics |
MOSFET N-CH 600V 7.5A IPAK |
|
FQP2P40-F080Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 400V 2A TO220-3 |
|
STB35N60DM2STMicroelectronics |
MOSFET N-CH 600V 28A D2PAK |
|
HUF75345P3_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AUIRF1324WLIR (Infineon Technologies) |
MOSFET N-CH 24V 240A TO262-3 |
|
STP185N55F3STMicroelectronics |
MOSFET N-CH 55V 120A TO220AB |
|
IXFH30N60XWickmann / Littelfuse |
MOSFET N-CH 600V 30A TO247 |
|
IXFK73N30Wickmann / Littelfuse |
MOSFET N-CH 300V 73A TO264AA |
|
IXTA100N04T2Wickmann / Littelfuse |
MOSFET N-CH 40V 100A TO263 |
|
IRL640SPBFVishay / Siliconix |
MOSFET N-CH 200V 17A D2PAK |
|
TK33S10N1Z,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 33A DPAK |