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RM12N650IP

RM12N650IP

MOSFET N-CH 650V 11.5A TO251

RM12N650IP

RM12N650IP

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Part No :

RM12N650IP

Manufacturer
Rectron USA
Description
MOSFET N-CH 650V 11.5A TO251
Catalog
Transistors - FETs, MOSFETs - Single
Availability
021902 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 50 V
FET Feature:-
Power Dissipation (Max):101W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251
Package / Case:TO-251-3 Stub Leads, IPak
RM12N650IP is available at GangBo-ic.com, Please review product page below for detailed information, including RM12N650IP price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM12N650IP to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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