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3N163 DIE

3N163 DIE

P-CHANNEL, SINGLE ENHANCEMENT MO

3N163 DIE

3N163 DIE

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Part No :

3N163 DIE

Manufacturer
Linear Integrated Systems, Inc.
Description
P-CHANNEL, SINGLE ENHANCEMENT MO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10400 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
Type Description
Series:-
Package:Tray
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:50mA
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:250Ohm @ 100µA, 20V
Vgs(th) (Max) @ Id:5V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-6.5V
Input Capacitance (Ciss) (Max) @ Vds:3.5 pF @ 15 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:Surface Mount
Supplier Device Package:Die
Package / Case:Die
3N163 DIE is available at GangBo-ic.com, Please review product page below for detailed information, including 3N163 DIE price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 3N163 DIE to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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