P-CHANNEL, SINGLE ENHANCEMENT MO
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 50mA |
Drive Voltage (Max Rds On, Min Rds On): | 20V |
Rds On (Max) @ Id, Vgs: | 250Ohm @ 100µA, 20V |
Vgs(th) (Max) @ Id: | 5V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | -6.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 3.5 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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