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C3M0120065D

C3M0120065D

650V 120M SIC MOSFET

C3M0120065D

C3M0120065D

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Part No :

C3M0120065D

Manufacturer
Wolfspeed - a Cree company
Description
650V 120M SIC MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10431 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:C3M™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:157mOhm @ 6.76A, 15V
Vgs(th) (Max) @ Id:3.6V @ 1.86mA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 15 V
Vgs (Max):+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds:640 pF @ 400 V
FET Feature:-
Power Dissipation (Max):98W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
C3M0120065D is available at GangBo-ic.com, Please review product page below for detailed information, including C3M0120065D price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for C3M0120065D to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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