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EPC8002

EPC8002

GANFET N-CH 65V 2A DIE

EPC8002

EPC8002

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Part No :

EPC8002

Manufacturer
EPC
Description
GANFET N-CH 65V 2A DIE
Catalog
Transistors - FETs, MOSFETs - Single
Availability
22364 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 19 - Dec 23 2024
PDF
EPC8002 PDF
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):65 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:530mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds:21 pF @ 32.5 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Die
Package / Case:Die
EPC8002 is available at GangBo-ic.com, Please review product page below for detailed information, including EPC8002 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EPC8002 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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