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SI3460BDV-T1-GE3

SI3460BDV-T1-GE3

MOSFET N-CH 20V 8A 6TSOP

SI3460BDV-T1-GE3

SI3460BDV-T1-GE3

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Part No :

SI3460BDV-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 8A 6TSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11446 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
SI3460BDV-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:27mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2W (Ta), 3.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
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