MOSFET N-CH 55V 8CDIP
Type | Description |
---|---|
Series: | HTMOS™ |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 400mOhm @ 100mA, 5V |
Vgs(th) (Max) @ Id: | 2.4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.3 nC @ 5 V |
Vgs (Max): | 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 290 pF @ 28 V |
FET Feature: | - |
Power Dissipation (Max): | 50W (Tj) |
Operating Temperature: | -55°C ~ 225°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | 8-CDIP-EP |
Package / Case: | 8-CDIP Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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