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TK200F04N1L,LXGQ

TK200F04N1L,LXGQ

MOSFET N-CH 40V 200A TO220SM

TK200F04N1L,LXGQ

TK200F04N1L,LXGQ

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Part No :

TK200F04N1L,LXGQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 40V 200A TO220SM
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11385 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
Type Description
Series:U-MOSVIII-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:200A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:0.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:214 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:14920 pF @ 10 V
FET Feature:-
Power Dissipation (Max):375W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:TO-220SM(W)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TK200F04N1L,LXGQ is available at GangBo-ic.com, Please review product page below for detailed information, including TK200F04N1L,LXGQ price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TK200F04N1L,LXGQ to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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