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MP930-0.50-1%

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BTS282ZE3180AATMA2

BTS282ZE3180AATMA2

MOSFET N-CH 49V 80A TO263-7

BTS282ZE3180AATMA2

BTS282ZE3180AATMA2

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Part No :

BTS282ZE3180AATMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 49V 80A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11635 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
BTS282ZE3180AATMA2 PDF
Type Description
Series:TEMPFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):49 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:232 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4800 pF @ 25 V
FET Feature:Temperature Sensing Diode
Power Dissipation (Max):300W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-1
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
BTS282ZE3180AATMA2 is available at GangBo-ic.com, Please review product page below for detailed information, including BTS282ZE3180AATMA2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BTS282ZE3180AATMA2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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