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IPW65R019C7FKSA1

IPW65R019C7FKSA1

MOSFET N-CH 650V 75A TO247-3

IPW65R019C7FKSA1

IPW65R019C7FKSA1

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Part No :

IPW65R019C7FKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 75A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10680 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IPW65R019C7FKSA1 PDF
Type Description
Series:CoolMOS™ C7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:19mOhm @ 58.3A, 10V
Vgs(th) (Max) @ Id:4V @ 2.92mA
Gate Charge (Qg) (Max) @ Vgs:215 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9900 pF @ 400 V
FET Feature:-
Power Dissipation (Max):446W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
IPW65R019C7FKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPW65R019C7FKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPW65R019C7FKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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