MOSFET N-CHANNEL 30V 58A 8DFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8.5mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1844 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 46W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (5x6) |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NX7002BKMBYLRochester Electronics |
NX7002B - 60V, N-CHANNEL TRENCH |
|
CSD18510KCSTexas Instruments |
MOSFET N-CH 40V 200A TO220-3 |
|
PMV120ENEARNexperia |
MOSFET N-CH 60V 2.1A TO236AB |
|
STWA48N60M6STMicroelectronics |
MOSFET N-CH 600V 39A TO247 |
|
RQ6E080AJTCRROHM Semiconductor |
MOSFET N-CH 30V 8A TSMT6 |
|
NTB30N20T4GRochester Electronics |
MOSFET N-CH 200V 30A D2PAK |
|
PMV48XP/MI215Rochester Electronics |
P-CHANNEL MOSFET |
|
SIHG22N60AE-GE3Vishay / Siliconix |
MOSFET N-CH 600V 20A TO247AC |
|
IPD60R360PFD7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10A TO252-3 |
|
APT13F120SRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 14A D3PAK |
|
BSS123TAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 170MA SOT23-3 |
|
NTMFD4951NFT3GRochester Electronics |
MOSFET N-CH 30V 10.8A 8DFN DL |
|
H7N0308CF-ERochester Electronics |
N-CHANNEL POWER MOSFET |