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C2M0280120D

C2M0280120D

SICFET N-CH 1200V 10A TO247-3

C2M0280120D

C2M0280120D

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Part No :

C2M0280120D

Manufacturer
Wolfspeed - a Cree company
Description
SICFET N-CH 1200V 10A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
116011 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
C2M0280120D PDF
Type Description
Series:Z-FET™
Package:Tube
Part Status:Not For New Designs
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:370mOhm @ 6A, 20V
Vgs(th) (Max) @ Id:2.8V @ 1.25mA (Typ)
Gate Charge (Qg) (Max) @ Vgs:20.4 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:259 pF @ 1000 V
FET Feature:-
Power Dissipation (Max):62.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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