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G3R160MT12D

G3R160MT12D

SIC MOSFET N-CH 22A TO247-3

G3R160MT12D

G3R160MT12D

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Part No :

G3R160MT12D

Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH 22A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10535 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 25 - Dec 29 2024
Type Description
Series:G3R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:192mOhm @ 10A, 15V
Vgs(th) (Max) @ Id:2.69V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 15 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:730 pF @ 800 V
FET Feature:-
Power Dissipation (Max):123W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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