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RM12N650LD

RM12N650LD

MOSFET N-CH 650V 11.5A TO252-2

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RM12N650LD

RM12N650LD

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Part No :

RM12N650LD

Manufacturer
Rectron USA
Description
MOSFET N-CH 650V 11.5A TO252-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
024802 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 50 V
FET Feature:-
Power Dissipation (Max):101W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252-2
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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