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RM35N30DN

RM35N30DN

Image is for reference, please contact us to get the real picture

Part No :

RM35N30DN

Manufacturer
Rectron USA
Description
MOSFET N-CHANNEL 30V 35A 8DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
414741 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1265 pF @ 15 V
FET Feature:-
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN-EP (3x3)
Package / Case:8-PowerVDFN
RM35N30DN is available at GangBo-ic.com, Please review product page below for detailed information, including RM35N30DN price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM35N30DN to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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