GANFET NCH 40V 31A DIE
Type | Description |
---|---|
Series: | eGaN® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 2.4mOhm @ 30A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 16mA |
Gate Charge (Qg) (Max) @ Vgs: | 18 nC @ 5 V |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 1900 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SUD50P08-25L-BE3Vishay / Siliconix |
MOSFET P-CH 80V 12.5A/50A DPAK |
|
IPP70N04S3-07Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFS4310PBFRochester Electronics |
MOSFET N-CH 100V 130A D2PAK |
|
FDP39N20Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 39A TO220-3 |
|
STL18N60M2STMicroelectronics |
MOSFET N-CH 600V 9A POWERFLAT HV |
|
SIHP15N50E-GE3Vishay / Siliconix |
MOSFET N-CH 500V 14.5A TO220AB |
|
FQL40N50FRochester Electronics |
MOSFET N-CH 500V 40A TO264-3 |
|
FDD6632Rochester Electronics |
MOSFET N-CH 30V 9A DPAK |
|
RSE002N06TLROHM Semiconductor |
MOSFET N-CH 60V 250MA EMT3 |
|
IPP023N10N5AKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A TO220-3 |
|
RQ5E030AJTCLROHM Semiconductor |
MOSFET N-CHANNEL 30V 3A TSMT3 |
|
STP9NK90ZSTMicroelectronics |
MOSFET N-CH 900V 8A TO220AB |
|
AUIRL3705NRochester Electronics |
AUTOMOTIVE HEXFET N-CHANNEL |