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IRFD123PBF

IRFD123PBF

MOSFET N-CH 100V 1.3A 4DIP

IRFD123PBF

IRFD123PBF

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Part No :

IRFD123PBF

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 100V 1.3A 4DIP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
373937 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 03 - Dec 07 2024
PDF
IRFD123PBF PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:270mOhm @ 780mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:360 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:4-DIP, Hexdip, HVMDIP
Package / Case:4-DIP (0.300", 7.62mm)
IRFD123PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFD123PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFD123PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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