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SIHD5N80AE-GE3

SIHD5N80AE-GE3

E SERIES POWER MOSFET DPAK (TO-2

SIHD5N80AE-GE3

SIHD5N80AE-GE3

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Part No :

SIHD5N80AE-GE3

Manufacturer
Vishay / Siliconix
Description
E SERIES POWER MOSFET DPAK (TO-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
723372 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 03 - Dec 07 2024
Type Description
Series:E
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.35Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:321 pF @ 100 V
FET Feature:-
Power Dissipation (Max):62.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252AA)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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