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G2R120MT33J

G2R120MT33J

SIC MOSFET N-CH TO263-7

G2R120MT33J

G2R120MT33J

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Part No :

G2R120MT33J

Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
932693 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 29 - May 03 2024
Type Description
Series:G2R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):3300 V
Current - Continuous Drain (Id) @ 25°C:35A
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:156mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:145 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:3706 pF @ 1000 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G2R120MT33J is available at GangBo-ic.com, Please review product page below for detailed information, including G2R120MT33J price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for G2R120MT33J to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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