MOSFET N-CH 100V 5A/17A TO220-3F
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta), 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 34mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 870 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 2.1W (Ta), 23.5W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3F |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NX3008PBKVLNexperia |
MOSFET P-CH 30V 230MA TO236AB |
|
DMN2550UFA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 600MA 3DFN |
|
STL11N4LLF5STMicroelectronics |
MOSFET N-CH 40V 11A POWERFLAT |
|
IP165R660CFDRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AUIRF2907ZS-7PRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
FDD6530ARochester Electronics |
MOSFET N-CH 20V 21A TO252 |
|
PMPB10XNEAXNexperia |
MOSFET N-CH 20V 9A DFN2020MD-6 |
|
SQD40131EL_GE3Vishay / Siliconix |
MOSFET P-CH 40V 50A TO252AA |
|
FDD6770ARochester Electronics |
24A, 25V, 0.004OHM, N-CHANNEL , |
|
RM150N60T2Rectron USA |
MOSFET N-CH 60V 150A TO220-3 |
|
MCH3481-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 2A SC70FL/MCPH3 |
|
FDMS7556SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 35A/49A 8PQFN |
|
STF7NM60NSTMicroelectronics |
MOSFET N-CH 600V 5A TO220FP |