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RM2N650LD

RM2N650LD

MOSFET N-CHANNEL 650V 2A TO252-2

RM2N650LD

RM2N650LD

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Part No :

RM2N650LD

Manufacturer
Rectron USA
Description
MOSFET N-CHANNEL 650V 2A TO252-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
212321 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 50 V
FET Feature:-
Power Dissipation (Max):23W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252-2
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
RM2N650LD is available at GangBo-ic.com, Please review product page below for detailed information, including RM2N650LD price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM2N650LD to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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