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EPC2010C

EPC2010C

GANFET N-CH 200V 22A DIE OUTLINE

EPC2010C

EPC2010C

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Part No :

EPC2010C

Manufacturer
EPC
Description
GANFET N-CH 200V 22A DIE OUTLINE
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11234 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 23 - Dec 27 2024
PDF
EPC2010C PDF
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:25mOhm @ 12A, 5V
Vgs(th) (Max) @ Id:2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:5.3 nC @ 5 V
Vgs (Max):+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds:540 pF @ 100 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Die Outline (7-Solder Bar)
Package / Case:Die
EPC2010C is available at GangBo-ic.com, Please review product page below for detailed information, including EPC2010C price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EPC2010C to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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