MOSFET N-CH 60V 70A TO247-3
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 9mOhm @ 78A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 190 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7400 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
ATP114-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 55A ATPAK |
|
2N6755Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPA65R110CFDXKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 31.2A TO220 |
|
R8002ANXROHM Semiconductor |
MOSFET N-CH 800V 2A TO220FM |
|
PSMN8R2-80YS,115Nexperia |
MOSFET N-CH 80V 82A LFPAK56 |
|
NTB25P06T4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 27.5A D2PAK |
|
SI8802DB-T2-E1Vishay / Siliconix |
MOSFET N-CH 8V 4MICROFOOT |
|
IPL60R125C7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 17A 4VSON |
|
NTMSD3P303R2Rochester Electronics |
MOSFET P-CH 30V 2.34A 8SOIC |
|
RSS065N06FRATBROHM Semiconductor |
MOSFET N-CH 60V 6.5A 8SOP |
|
NTMSD2P102LR2GRochester Electronics |
MOSFET P-CH 20V 2.3A 8SOIC |
|
TPIC5302DRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF3205LPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 110A TO262 |