HIGH SPEED N-CHANNEL LATERAL DMO
Type | Description |
---|---|
Series: | SD211 |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 50mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 25V |
Rds On (Max) @ Id, Vgs: | 45Ohm @ 1mA, 10V |
Vgs(th) (Max) @ Id: | 1.5V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | +25V, -300mV |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | 300mW (Ta) |
Operating Temperature: | -55°C ~ 125°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-72-4 |
Package / Case: | TO-206AF, TO-72-4 Metal Can |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFP4368PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 195A TO247AC |
|
NTD70N03RT4Rochester Electronics |
MOSFET N-CH 25V 10A/32A DPAK |
|
AUIRF7648M2TRIR (Infineon Technologies) |
MOSFET N-CH 60V 14A DIRECTFET |
|
FQPF7P20Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 5.2A TO220F |
|
HUF76633S3SRochester Electronics |
MOSFET N-CH 100V 39A D2PAK |
|
STI20N65M5STMicroelectronics |
MOSFET N-CH 650V 18A I2PAK |
|
IXTH3N150Wickmann / Littelfuse |
MOSFET N-CH 1500V 3A TO247 |
|
IXFX38N80Q2Wickmann / Littelfuse |
MOSFET N-CH 800V 38A PLUS247-3 |
|
DMN65D8LW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 300MA SOT323 |
|
DMN2990UFZ-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 250MA 3DFN |
|
NVD2955T4GRochester Electronics |
MOSFET P-CH 60V 12A DPAK |
|
AUIRFS4010Rochester Electronics |
MOSFET N-CH 100V 180A TO263 |
|
SSM3J358R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A SOT23F |