TVS DIODE 210V 349.5V R-6
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Type: | Zener |
Unidirectional Channels: | - |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 210V |
Voltage - Breakdown (Min): | 233V |
Voltage - Clamping (Max) @ Ipp: | 349.5V |
Current - Peak Pulse (10/1000µs): | - |
Power - Peak Pulse: | 5000W (5kW) |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | - |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | R6, Axial |
Supplier Device Package: | R-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SMF30AT1GRochester Electronics |
TRANS VOLTAGE SUPPRESSOR DIODE, |
|
8.0SMDJ33CA-T7Wickmann / Littelfuse |
TVS DIODE 8KW 33V 5%BI DO-214AB |
|
P4SMA9.1CAHM2GTSC (Taiwan Semiconductor) |
TVS DIODE 7.78V 13.4V DO214AC |
|
DF5A6.8FUTE85LFToshiba Electronic Devices and Storage Corporation |
TVS DIODE 5VWM USV |
|
P6SMB9.1A-QJ.W. Miller / Bourns |
TVS DIODE AECQ |
|
SMBJ130A M4GTSC (Taiwan Semiconductor) |
TVS DIODE 130V 209V DO214AA |
|
SMBJ10CA-TRSTMicroelectronics |
TVS DIODE 10V 21.7V SMB |
|
MMBZ6V8ALT1Rochester Electronics |
TVS DIODE 4.5VWM 9.6VC SOT23 |
|
P4SMA27CA R3GTSC (Taiwan Semiconductor) |
TVS DIODE 23.1V 37.5V DO214AC |
|
MRT100KP120CAE3Roving Networks / Microchip Technology |
TVS DIODE 120V 235V CASE 5A |
|
SMLJ48CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 48V 77.4V DO214AB |
|
SM6T30A-M3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 25.6V 41.5V DO214AA |
|
SZNUP2301MW6T1GSanyo Semiconductor/ON Semiconductor |
TVS DIODE SC88 |